Two partners of the GreenDiamond project, Institut Néel and G2ELab, have published a paper about comprehensive electrical analysis of metal/Al2O3/O-terminated diamond. This paper gives a full picture of the different mechanisms involved in the gate oxide leakage current and Fermi level pinning in diamond MOSCAP. This basic understanding was crucial to reach one of the main objective of the GreenDiamond project: the achievement of reliable and robust gate oxide for diamond MOSFET.
The paper is available in Applied Physics Letters October 26th 2017 (DOI: 10.1063/1.4997975).