UCL hosted the latest GreenDiamond General Assembly, as the project nears its second reporting period. The meeting was productive and full of enthusiam as the first diamond MOSFET chips progress through to advanced fabrication stages! Stay tuned for upcoming results and publications.

The General Assembly wasn’t all work either. The consortium had the opportunity to meet the infamous founding father of UCL, Jeremy Bentham, discover the Grant Museum and enjoy a fabulous meal and music at Sarastro in the West End. Some of the best things on offer in London!

Two partners of the GreenDiamond project, Institut Néel and G2ELab, have published a paper about comprehensive electrical analysis of metal/Al2O3/O-terminated diamond. This paper gives a full picture of the different mechanisms involved in the gate oxide leakage current and Fermi level pinning in diamond MOSCAP. This basic understanding was crucial to reach one of the main objective of the GreenDiamond project: the achievement of reliable and robust gate oxide for diamond MOSFET.

The paper is available in Applied Physics Letters October 26th 2017 (DOI: 10.1063/1.4997975).

GreenDiamond partners from Belgium, France and the UK attended the 4th French-Japanese Workshop on Diamond Devices, held at OIST in Okinawa, Japan (30th October – 1st November 2017). This was an opportunity to discuss challenges and advances in the diamond power device field with colleagues from across the world.

Thank you to Stoffel Janssens (OIST), Satoshi Koizumi (NIMS) and Julien Pernot (Institut Néel) for organising!