GreenDiamond Project : Electronics with Diamond Power Devices

The key to the efficient transmission and conversion of low-carbon electrical energy is the improvement of power electronic devices. Diamond is considered to be the ultimate wide bandgap semiconductor material for applications in high power electronics due to its exceptional thermal and electronic properties.

Two recent developments – the emergence of commercially available electronic grade single crystals and a scientific breakthrough in creating a MOS channel in diamond technology, have now opened new opportunities for the fabrication and commercialisation of diamond power transistors. These will result in substantial improvements in the performance of power electronic systems by offering higher blocking voltages, improved efficiency and reliability, as well as reduced thermal requirements thus opening the door to more efficient green electronic systems.


Award for GreenDiamond post-doc Gauthier Chicot!

Dr. Gauthier Chicot, post-doctoral fellow at CNRS/G2ELab, was awarded the best presentation award at the international conference E-MRS 2016 Fall in Warsaw, Poland (September 2016). Dr. Chicot presented his work during Symposium J Diamond for Electronic Devices on optimisation of drift layer for diamond power devices, improving the specific ON state resistance vs breakdown voltage compromise. This work has been conducted within the GreenDiamond project, as a close collaboration between CNRS/G2ELab and CNRS/Néel.

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G. Chicot, D. Eon, N. Rouger, Trade-off for optimising drift region of diamond power devices, E-MRS Fall 2016, Warsaw, Poland, September 2016.